Temperature characteristics of a simple current mirror on silicon high-voltage nLDMOS with a large DRIFT area

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The results of a study of the temperature characteristics of a simple current mirror on high-voltage SOI nLDMOS transistors with a large drift area with topological norms of 0.5 microns in an extended range of external temperatures are discussed. The characteristics of a simple current mirror at temperatures of –60, 25, 125 °C have been experimentally studied. A mathematical model of a high-voltage nLDMOS transistor with a large DRIFT region has been developed for static operation in the field of high drain voltages and a wide range of ambient temperatures. Based on the results of experimental and numerical studies, a temperature range has been established in which the transfer characteristic of the current mirror retains linearity. It is 300 °C from –110 to 190 °C in the control voltage range from 25 to 55 V. In the same temperature range, the transmission coefficient (specularity) depends linearly on the input current level. Based on the data obtained, the conditions for determining the SOA of a simple current mirror on SOI LDMOS transistors are formulated.

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Sobre autores

A. Novoselov

Scientific Research Institute for System Analysis of the National Research Centre “Kurchatov Institute”

Autor responsável pela correspondência
Email: volkov@niisi.ras.ru
Rússia, Moscow

M. Gusev

Scientific Research Institute for System Analysis of the National Research Centre “Kurchatov Institute”

Email: volkov@niisi.ras.ru
Rússia, Moscow

N. Masal’skii

Scientific Research Institute for System Analysis of the National Research Centre “Kurchatov Institute”

Email: volkov@niisi.ras.ru
Rússia, Moscow

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2. Fig. 1. Simple current mirror circuit

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3. Fig. 2. Iout(Uds) dependence at constant T = 25 °C and different Iin: 10 μA (1); 0.05 mA (2); 0.1 mA (3). The inset shows the Iout(Uds) dependence for Iin = 10 μA in the same coordinates as the main figure, but with a greater increase in current

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4. Fig. 3. Iout(Iin) dependences at constant Uds = 55 V and different T: –60 °C (1); 25 °C (2); 125 °C (3)

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5. Fig. 4. Iout(T) dependences. Output current in Iout 1 10–4 A (for better perception of the calculated and experimental data) at different values of the input current. Simulation results are a solid line, experimental data are dots connected by a dotted line. Upper group (pair) – current Iin 1 10–4 A, middle group – current Iin 0.5 10–4 A, lower group – current Iin 0.25 10–4 A

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6. Fig. 5. Dependence k_T (Iin). Simulation results – solid line, experimental data – points connected by a dotted line

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7. Fig. 6. Dependence k_T_norm (Iin_norm)

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