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Nanostructured ruthenium etching in three-component Cl2 /O2/Ar plasma
Amirov I.I., Izyumov M.O., Lopaev D.V., Rakhimova T.V., Kropotkin A.N., Voloshin D.G., Palov A.P.
Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy
Murin D.B., Chesnokov I.A., Pivovarenok S.A., Efremov A.M.
Parameters and Composition of Plasma in a Mixture of CF4 + H2 + Ar: Effect of the CF4/H2 Ratio
Miakonkikh A.V., Kuzmenko V.O., Efremov A.M., Rudenko K.V.
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