Mikroèlektronika

A theoretical study of the photovoltaic parameters of inorganic solar cells based on ZnO/Cu₂O and ZnO/CuO heterojunctions was carried out to improve the energy conversion efficiency. The influence of the thickness, charge carrier concentration and band gap of Cu₂O and CuO films, as well as ZnO, on the photovoltaic parameters of solar cells has been studied. The simulation results showed that the efficiency of solar cells is significantly affected by the contact potential difference, the diffusion length of minority charge carriers, the amount of generated photocurrent and the recombination rate. The maximum efficiency of a solar cell based on ZnO/Cu₂O was obtained equal to 10,63%, which is achieved with a band gap, thickness and charge carrier concentration in Cu₂O equal to 1.9 eV, 5 μm and 10¹⁵ cm^–3 and band gap, thickness and the concentration of charge carriers in ZnO is equal to 3,4 eV, 20 nm and 10¹⁹ cm^–3, as well as the displacement of the edges of the conduction bands is 0.8 eV. For a solar cell based on ZnO/CuO, a maximum efficiency of 18.27% was obtained with a band gap, thickness and charge carrier concentration in CuO equal to 1.4 eV, 3 μm and 10¹⁷ cm^–3, as well as a displacement of the conduction band edges of 0.03 eV. The obtained results of modeling solar cells can be used in the design and manufacture of inexpensive and efficient photovoltaic structures.

A theoretical model of a quantum node that implements the two-qubit CNOT operation with use of photonic qubits with spatial encoding is considered. Each qubit is represented by a pair of modes supporting an arbitrary superposition of single-photon states. The active element of the node is a single or double quantum dot with a tunable frequency, which coherently exchanges an energy quantum with the modes. The spectral characteristics of the quantum node elements are simulated. The probability of implementation of a controlled inversion of the qubit state is calculated depending on the system parameters.

A theoretical model is proposed that can describe the current-voltage characteristic of a bipolar filament memristor during reversible switching. The model allows us to describe various types of current-voltage curves observed in experiments. It has been established that the initially formed filament, after a series of switching, acquires a stationary shape that reproduces the current-voltage characteristic.

Examines the fundamental rights of Phosphide of India, legitimized by Tellur and, in the last resort, compensated for. Data on the composition of four high-quality images of the InP: Cu photoelectronic spectrum are presented in the individual layers. The work is characterized by the semi-empiric approach to photoconduction of InP: Cu oxide films. It is concluded that the photoresistance Iph (α(ћω)) was analytically approximated as the function of the experimental-complete spectral distribution of the coefficiency phosphorus india. It is proposed to use five approximating functions with the aim of analyzing the coefficient of absorption of Indian phosphorus α(ћω). Completed 5 locations with different signs of median isolation. On the basis of analytical amplitudes, the complete analytical amplitude Iph(α(ћω)) is modelled. Analogously, five conclusions were drawn that indicate a sign of median isolation. Five non-stationary measures of IF photometry have been taken (as two functions: co-efficiency of exposure, as photo energy functions, and time-consuming observations) in normal situations. The answer to the question is the most mathematical and physical solution of the proximate function α(ћω). Obviously, it shows that this the degree of variance is optimal for its implementation (inclusion of this degree of variance in the structure Iph = f(α) and α = f(ћω)) of the complete analytical description of the process photoconductivity. It should be noted that subsequent research may be based on the establishment of physical bases of photoconductivity in the short wave of fundamental transfers of phosphorus from India, as well as research into the properties of air on the high InP: Cu layer, with its stability and stability.

Schottky barrier diodes based on PtSi-Si contact can be used as detectors for registration of radiation in the infrared spectral region. However, the quantum efficiency of such receivers is very low compared to photodetectors based on narrow-gap semiconductors and p-n junctions. To increase the quantum efficiency of Schottky receivers, as it will be shown below, they are made in the form of the so-called “optical cavity”, and the thickness of PtSi should not exceed 100 A⁰. For this purpose we have developed a technological mode of multilayer metallization to obtain thin PtSi-Si contacts.

The kinetics of interaction of high-frequency plasma of difluorodichloromethane and its mixture with helium with the surface of gallium arsenide was experimentally studied. It was established that in the studied range of conditions, complete decomposition of the original difluorodichloromethane molecule to atomic carbon occurs. It has been confirmed that the main chemically active particles responsible for etching are reactive chlorine atoms. It has been shown that the etching process occurs in the mode of an ion-stimulated chemical reaction, where the desorption of products under the influence of ion bombardment plays a significant role in surface cleaning. The emission spectra of plasma radiation in the presence of a gallium arsenide semiconductor wafer are analyzed. Control lines and stripes were selected to control the speed of the etching process based on the emission intensity of the lines and stripes of the etching products.