MICROSTRUCTURE OF A CrSi2 TRANSITION LAYER PRODUCED BY HOT PRESSING OF Cr AND Si

M. S. Lukasov; Лукасов М. С.; N. A. Arkharova; Архарова Н. А.; A. S. Orekhov; Орехов А. С.; E. V. Rakova; Ракова Е. В.; F. Yu. Solomkin; Соломкин Ф. Ю.; V. V. Klechkovskaya; Клечковская В. В.

doi:10.31857/S002347612360026X

MICROSTRUCTURE OF A CrSi2 TRANSITION LAYER PRODUCED BY HOT PRESSING OF Cr AND Si

作者: Lukasov M.S.¹, Arkharova N.A.¹, Orekhov A.S.¹, Rakova E.V.¹, Solomkin F.Y.², Klechkovskaya V.V.¹
隶属关系:
1. Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333 Russia
2. Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia
期: 卷 68, 编号 4 (2023)
页面: 615-620
栏目: НАНОМАТЕРИАЛЫ, КЕРАМИКА
URL: https://ter-arkhiv.ru/0023-4761/article/view/673421
DOI: https://doi.org/10.31857/S002347612360026X
EDN: https://elibrary.ru/IBYRNK
ID: 673421

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详细

Hot pressing of a Si single crystal in the bulk of electrolytic Cr powder at 1213 K, with subsequent annealing in air, leads to the formation of an intermediate polycrystalline silicide layer at the interface between the initial components. The phase composition and microstructure of the transition layer and its vicinity were investigated by scanning electron microscopy, X-ray energy-dispersive microanalysis, and electron backscatter diffraction. The transition layer has a crystal structure of the hexagonal phase of chromium disilicide (sp. gr. P6222). An additional annealing up to 120 h leads to insignificant recrystallization of small grains into larger ones.

关键词

ULTRAFAST MAGNETIC DYNAMICS, Co/Pt MULTILAYER STRUCTURES

参考

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