Doped silicon nanoparticles. A review

Мұқаба

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

Doped silicon nanoparticles combine availability and biocompatibility of the material with a wide variety of functional properties. In this review, the methods of fabrication of doped silicon nanoparticles are discussed, the prevalent of those being chemical vapor deposition, annealing of substoichiometric silicon compounds, and diffusion doping. The data are summarized for the attained impurity contents, in the important case of phosphorus it is shown that impurity, excessive with respect to bulk solubility, is electrically inactive. The patterns of intraparticle impurity distributions are presented, that were studied in the previous decade with highly-informative techniques of atom probe tomography and solid-state NMR. Prospective optical and electrical properties of doped silicon nanoparticles are reviewed, significant role of the position of the impurities is exemplified with plasmonic behavior.

Толық мәтін

Рұқсат жабық

Авторлар туралы

S. Bubenov

Lomonosov Moscow State University

Хат алмасуға жауапты Автор.
Email: s.bubenov@gmail.com

Department of Chemistry

Ресей, 119991 Moscow

S. Dorofeev

Lomonosov Moscow State University

Email: s.bubenov@gmail.com

Department of Chemistry

Ресей, 119991 Moscow

Әдебиет тізімі

  1. Duan H., Wang J., Liu L., Huang Q., Li. J. // Prog. Photovolt: Res. Appl. 2016. V. 24. P. 83–93. https://doi.org/10.1002/pip.2654
  2. Tarascon J.-M. // Nature Chem. 2010. V. 2. P. 510–510. https://doi.org/10.1038/nchem.680
  3. Canham L.T. // Appl. Phys. Lett. 1990. V. 57. № 10. P. 1046–1048. https://doi .org/10.1063/1.103561
  4. Narducci D., Giulio F. // Materials. 2022. V. 15. 1214. https://doi.org/10.3390/ma15031214
  5. Tang F., Tan Y., Jiang T., Zhou Y. // J. Mater. Sci. 2022. V. 57. P. 2803–2812. https://doi .org/10.1007/s10853-021-06679-3
  6. Long B., Zou Y., Li Z., Ma Z., Jiang W., Zou H., Chen H. // ACS Appl. Energy Mater. 2020. V. 3. № 6. P. 5572–5580. https://doi .org/10.1021/acsaem.0c00534
  7. Rowe D.J., Jeong J.S., Mkhoyan K.A., Kortshagen U.R. // Nano Lett. 2013. V. 13. P. 1317–1322. https://doi .org/10.1021/nl4001184
  8. Limpens R., Pach G.F., Neale N.R. // Chem. Mater. 2019. V. 31. P. 4426–4435. https://doi .org/10.1021/acs.chemmater.9b00810
  9. Zhou S., Pi X., Ni Z., Ding Y., Jiang Y., Jin C., Delerue C., Yang D., Nozaki T. // ACS Nano. 2015. V. 9. № 1. P. 378–386. https://doi .org/10.1021/nn505416r
  10. Scriba M.R., Britton D.T., Härting M. // Thin Solid Films. 2011. V. 519. P. 4491–4494. https://doi .org/10.1016/j.tsf.2011.01.330
  11. Knipping J., Wiggers H., Rellinghaus B., Roth P., Konjhodzic D., Meier C. // J. Nanosci. Nanotechnol. 2004. V. 4. P. 1039–1044. https://doi .org/10.1166/jnn.2004.149
  12. Ledoux G., Guillois O., Porterat D., Reynaud C., Huisken F., Kohn B., Paillard V. // Phys. Rev. B. 2000. V. 62. № 23. P. 15942–15951. https://doi .org/10.1103/PhysRevB.62.15942
  13. Rohani P., Banerjee S., Sharifi-Asl S., Malekzadeh M., Shahbazian-Yassar R., Billinge S.J.L., Swihart M.T. // Adv. Funct. Mater. 2019. V. 29. 1807788. https://doi .org/10.1002/adfm.201807788
  14. Lechner R., Stegner A.R., Pereira R.N., Dietmueller R., Brandt M.S., Ebbers A., Trocha M., Wiggers H., Stutzmann M. // J. Appl. Phys. 2008. V. 104. 053701. https://doi.org/10.1063/1.2973399
  15. Pi X.D., Gresback R., Liptak R.W., Campbell S.A., Kortshagen U. // Appl. Phys. Lett. 2008. V. 92. 123102. https://doi.org/10.1063/1.2897291
  16. Kortshagen U.R., Sankaran R.M., Pereira R.N., Girshick S.L., Wu J.J., Aydil E.S. // Chem. Rev. 2016. V. 116. P. 11061–11127. https://doi .org/10.1021/acs.chemrev.6b00039
  17. Zhou S., Ni Z., Ding Y., Sugaya M., Pi X., Nozaki T. // ACS Photonics. 2016. V. 3. № 3. P. 415–422. https://doi .org/10.1021/acsphotonics.5b00568
  18. Zhou S., Pi X., Ni Z., Luan Q., Jiang Y., Jin C., Nozaki T., Yang D. // Part. Part. Syst. Charact. 2015. V. 32. P. 213–221. https://doi .org/10.1002/ppsc.201400103
  19. Stegner A.R., Pereira R.N., Klein K., Lechner R., Dietmueller R., Brandt M.S., Stutzmann M., Wiggers H. // Phys. Rev. Lett. 2008. V. 100. 026803. https://doi.org/10.1103/PhysRevLett.100.026803
  20. Диаграммы состояния двойных металлических систем: Справочник. Т. 3. кн. 1. Лякишев Н.П. (ред.). М.: Машиностроение, 2001. 872 с.
  21. Zhou S., Ding Y., Pi X., Nozaki T. // Appl. Phys. Lett. 2014. V. 105. 183110. https://doi .org/10.1063/1.4901278
  22. Chen J., Rohani P., Karakalos S.G., Lance M.J., Toops T.J., Swihart M.T., Kyriakidou E.A. // Chem. Commun. 2020. V. 56. P. 9882–9885. https://doi .org/10.1039/D0CC02822C
  23. Ni Z., Pi X., Zhou S., Nozaki T., Grandidier B., Yang D. // Adv. Opt. Mater. 2016. V. 4. P. 700–707. https://doi.org/10.1002/adom.201500706
  24. Antognini L., Paratte V., Haschke J., Cattin J., Dréon J., Lehmann M., Senaud L.-L., Jeangros Q., Ballif C., Boccard M. // IEEE J. Photovolt. 2021. V. 11. № 4. P. 944–956. https://doi .org/10.1109/JPHOTOV.2021.3074072
  25. Delerue C. // Phys. Rev. B. 2018. V. 98. 045434. https://doi .org/10.1103/PhysRevB.98.045434
  26. Wang K., He Q., Yang D., Pi X. // Adv. Opt. Mater. 2022. V. 10. № 24. 2201831. https://doi .org/10.1002/adom.202201831
  27. Sugimoto H., Fujii M., Imakita K. // Nanoscale. 2014. V. 6. P. 12354–12359. https://doi .org/10.1039/c4nr03857f
  28. Milliken S., Cui K., Klein B.A., Cheong IT., Yu H., Michaelis V.K., Veinot J.G.C. // Nanoscale. 2021. V. 13. P. 18281–18292. https://doi .org/10.1039/d1nr05255a
  29. Trad F., Giba A.E., Devaux X., Stoffel M., Zhigunov D., Bouché A., Geiskopf S., Demoulin R., Pareige P., Talbot E., Vergnat M., Rinnert H. // Nanoscale. 2021. V. 13. P. 19617–19625. https://doi .org/ 10.1039/d1nr04765e
  30. Valdenaire A., Giba A.E., Stoffel M., Devaux X., Foussat L., Poumirol J.-M., Bonafos C., Guehairia S., Demoulin R., Talbot E., Vergnat M., Rinnert H. // ACS Appl. Nano Mater. 2023. V. 6. P. 3312–3320. https://doi .org/10.1021/acsanm.2c05088
  31. Kanzawa Y., Fujii M., Hayashi S., Yamamoto K. // Solid State Commun. 1996. V. 100. № 4. P. 227–230. https://doi.org/10.1016/0038-1098(96)00408-5
  32. Nomoto K., Sugimoto H., Breen A., Ceguerra A.V., Kanno T., Ringer S.P., Perez-Wurfl I., Conibeer G., Fujii M. // J. Phys. Chem. C. 2016. V. 120. P. 17845–17852. https://doi .org/10.1021/acs.jpcc.6b06197
  33. Sugimoto H., Fujii M., Fukuda M., Imakita K., Hayashi S. // J. Appl. Phys. 2011. V. 110. 063528. https://doi.org/10.1063/1.3642952
  34. Nomoto K., Cui X.-Y., Breen A., Ceguerra A.V., Perez-Wurfl I., Conibeer G., Ringer S.P. // Nanotechnology. 2022. V. 33. 075709. https://doi .org/10.1088/1361-6528/ac38e6
  35. Hao X.J., Cho E.-C., Flynn C., Shen Y.S., Conibeer G., Green M.A. // Nanotechnology. 2008. V. 19. 424019. https://doi .org/10.1088/0957-4484/19/42/424019
  36. Mimura A., Fujii M., Hayashi S., Kovalev D., Koch F. // Phys. Rev. B. 2000. V. 62. № 19. P. 12625–12627. https://doi.org/10.1103/PhysRevB.62.12625
  37. Sumida K., Ninomiya K., Fujii M., Fujio K., Hayashi S., Kodama M., Ohta H. // J. Appl. Phys. 2007. V. 101. 033504. https://doi .org/10.1063/1.2432377
  38. Fujii M., Mimura A., Hayashi S., Yamamoto K. // J. Appl. Phys. 2000. V. 87. № 4. P. 1855–1857. https://doi .org/10.1063/1.372103
  39. Almeida A.J., Sugimoto H., Fujii M., Brandt M.S., Stutzmann M., Pereira R.N. // Phys. Rev. B. 2016. V. 93. 115425. https://doi .org/10.1103/PhysRevB.93.115425
  40. Fujii M., Yamaguchi Y., Takase Y., Ninomiya K., Hayashi S. // Appl. Phys. Lett. 2004. V. 85. № 7. P. 1158–1160. https://doi .org/10.1063/1.1779955
  41. Fukuda M., Fujii M., Hayashi S. // J. Lumin. 2011. V. 131. P. 1066–1069. https://doi .org/10.1016/j.jlumin.2011.01.023
  42. Sugimoto H., Fujii M., Imakita K., Hayashi S., Akamatsu K. // J. Phys. Chem. C. 2013. V. 117. P. 11850–11857. https://doi .org/10.1021/jp4027767
  43. Sugimoto H., Fujii M., Imakita K., Hayashi S., Akamatsu K. // J. Phys. Chem. C. 2012. V. 116. P. 17969–17974. https://doi .org/10.1021/jp305832x
  44. Sugimoto H., Fujii M., Imakita K., Hayashi S., Akamatsu K. // J. Phys. Chem. C. 2013. V. 117. P. 6807–6813. https://doi .org/10.1021/jp312788k
  45. Kanno T., Sugimoto H., Fucikova A., Valenta J., Fujii M. // J. Appl. Phys. 2016. V. 120. 164307. https://doi .org/10.1063/1.4965986
  46. Hori Y., Kano S., Sugimoto H., Imakita K., Fujii M. // Nano Lett. 2016. V. 16. № 4. P. 2615–2620. https://doi .org/10.1021/acs.nanolett.6b00225
  47. Fujio K., Fujii M., Sumida K., Hayashi S., Fujisawa M., Ohta H. // Appl. Phys. Lett. 2008. V. 93. 021920. https://doi.org/10.1063/1.2957975
  48. Zeng Y., Dai N., Cheng Q., Huang J., Liang X., Song W. // Mater. Sci. Semicond. Process. 2013. V. 16. P. 598–604. https://doi .org/10.1016/j.mssp.2012.10.010
  49. Song D., Cho E.-C., Conibeer G., Flynn C., Huang Y., Green M.A. // Sol. Energy Mater. Sol. Cells. 2008. V. 92. P. 474–481. https://doi .org/10.1016/j.solmat.2007.11.002
  50. So Y.-H., Huang S., Conibeer G., Green M.A. // EPL. 2011. V. 96. 17011. https://doi .org/10.1209/0295-5075/96/17011
  51. Mathiot D., Khelifi R., Muller D., Duguay S. // Mater. Res. Soc. symp. proc. 2012. 1455. mrss12-1455-ii08-21. https://doi .org/10.1557/opl.2012.1238.
  52. Demoulin R., Muller D., Mathiot D., Pareige P., Talbot E. // Phys. Status Solidi RRL. 2020. V. 14. 2000107. https://doi.org/10.1002/pssr.202000107
  53. Demoulin R., Roussel M., Duguay S., Muller D., Mathiot D., Pareige P., Talbot E. // J. Phys. Chem. C. 2019. V. 123. P. 7381–7389. https://doi .org/10.1021/acs.jpcc.8b08620
  54. Khelifi R., Mathiot D., Gupta R., Muller D., Roussel M., Duguay S. // Appl. Phys. Lett. 2013. V. 102. 013116. https://doi.org/10.1063/1.4774266
  55. Yang P., Gwillaim R.M., Crowe I.F., Papachristodoulou N., Halsall M.P., Hylton N.P., Hulko O., Knights A.P., Shah M., Kenyon A.P. // Nucl. Instrum. Methods Phys. Res. B. 2013. V. 307. P. 456–458. https://doi .org/10.1016/j.nimb.2012.12.077
  56. Качурин Г.А., Черкова С.Г., Володин В.А., Марин Д.М., Тетельбаум Д.И., Becker H. // ФТП. 2006. Т. 40. № 1. С. 75–81.
  57. Murakami K., Shirakawa R., Tsujimura M., Uchida N., Fukata N., Hishita S.-I. // J. Appl. Phys. 2009. V. 105. 054307. https://doi .org/10.1063/1.3088871
  58. Zhang M., Poumirol J.-M., Chery N., Majorel C., Demoulin R., Talbot E., Rinnert H., Girard C., Cristiano F., Wiecha P.R., Hungria T., Paillard V., Arbouet A., Pécassou B., Gourbilleau F., Bonafos C. // Nanophotonics. 2022. V. 11. № 15. P. 3485–3493. https://doi.org/10.1515/nanoph-2022-0283
  59. Качурин Г.А., Яновская С.Г., Тетельбаум Д.И., Михайлов А.Н. // ФТП. 2003. Т. 37. № 6. С. 738–742.
  60. Zhang M., Poumirol J.-M., Chery N., Rinnert H., Giba A.E., Demoulin R., Talbot E., Cristiano F., Hungria T., Paillard V., Gourbilleau F., Bonafos C. // Nanoscale. 2023. V. 15. P. 7438–7449. https://doi .org/10.1039/D3NR00035D
  61. Ruffino F., Romano L., Carria E., Miritello M., Grimaldi M.G., Privitera V., Marabelli F. // J. Nanotechnol. 2012. V. 2012. 635705. https://doi .org/10.1155/2012/635705
  62. Makimura T., Yamamoto Y., Mitani S., Mizuta T., Li C.Q., Takeuchi D., Murakami K. // Appl. Surf. Sci. 2002. V. 197–198. P. 670–673. https://doi .org/10.1016/S0169-4332(02)00438-5
  63. Hiller D., López-Vidrier J., Gutsch S., Zacharias M., Wahl M., Bock W., Brodyanski A., Kopnarski M., Nomoto K., Valenta J., König D. // Sci. Rep. 2017. V. 7. 8337. https://doi .org/10.1038/s41598-017-08814-0
  64. Kobayashi H., Akaishi R., Kato S., Kurosawa M., Usami N., Kurokawa Y. // Jpn. J. Appl. Phys. 2020. V. 59. SGGF09. https://doi .org/10.7567/1347-4065/ab6346
  65. Gutsch S., Hartel A.M., Hiller D., Zakharov N., Werner P., Zacharias M. // Appl. Phys. Lett. 2012. V. 100. 233115. https://doi .org/10.1063/1.4727891
  66. Gutsch S., Laube J., Hiller D., Bock W., Wahl M., Kopnarski M., Gnaser H., Puthen-Veettil B., Zacharias M. // Appl. Phys. Lett. 2015. V. 106. 113103. https://doi .org/10.1063/1.4915307
  67. Hiller D., López-Vidrier J., Gutsch S., Zacharias M., Nomoto K., König D. // Sci. Rep. 2017. V. 7. 863. https://doi.org/10.1038/s41598-017-01001-1
  68. Nomoto K., Hiller D., Gutsch S., Ceguerra A.V., Breen A., Zacharias M., Conibeer G., Perez-Wurfl I., Ringer S.P. // Phys. Status Solidi RRL. 2017. V. 11. № 1. 1600376. https://doi .org/10.1002/pssr.201600376
  69. Gnaser H., Gutsch S., Wahl M., Schiller R., Kopnarski M., Hiller D., Zacharias M. // J. Appl. Phys. 2014. V. 115. 034304. https://doi .org/10.1063/1.4862174
  70. Shyam S., Das D. // J. Alloys Compd. 2021. V. 876. 160094. https://doi .org/10.1016/j.jallcom.2021.160094
  71. Pi X., Delerue C. // Phys. Rev. Lett. 2013. V. 111. 177402. https://doi .org/10.1103/PhysRevLett.111.177402
  72. Nomoto K., Sugimoto H., Cui X.-Y., Ceguerra A.V., Fujii M., Ringer S.P. // Acta Mater. 2019. V. 178. P. 186–193. https://doi .org/10.1016/j.actamat.2019.08.013
  73. Pi X., Chen X., Yang D. // J. Phys. Chem. C. 2011. V. 115. P. 9838–9843. https://doi .org/10.1021/jp111548b
  74. Chan T.-L., Tiago M.L., Kaxiras E., Chelikowsky J.R. // Nano Lett. 2008. V. 8. № 2. P. 596–600. https://doi .org/10.1021/nl072997a
  75. Bulyarskiy S.V., Svetukhin V.V. // Mater. Sci. Eng. B. 2021. V. 272. 115337. https://doi .org/10.1016/j.mseb.2021.115337
  76. Bulyarskiy S.V., Svetukhin V.V. // J. Nanopart. Res. 2020. V. 22. 361. https://doi .org/10.1007/s11051-020-05069-1
  77. Perego M., Bonafos C., Fanciulli M. // Nanotechnology. 2010. V. 21. 025602. https://doi .org/10.1088/0957-4484/21/2/025602
  78. Chen X., Yang P. // Int. J. Mod. Phys. B. 2017. V. 31. 1750110. https://doi .org/10.1142/S0217979217501107
  79. Perego M., Seguini G., Fanciulli M. // Surf. Interface Anal. 2013. V. 45. P. 386–389. https://doi .org/10.1002/sia.5001
  80. Perego M., Seguini G., Arduca E., Frascaroli J., De Salvador D., Mastromatteo M., Carnera A., Nicotra G., Scuderi M., Spinella C., Impellizzeri G., Lenardie C., Napolitani E. // Nanoscale. 2015. V. 7. P. 14469–14475. https://doi .org/10.1039/C5NR02584B
  81. Milliken S., Cheong IT., Cui K., Veinot J.G.C. // ACS Appl. Nano Mater. 2022. V. 5. P. 15785–15796. https://doi.org/10.1021/acsanm.2c03937
  82. Bubenov S.S., Dorofeev S.G., Eliseev A.A., Kononov N.N., Garshev A.V., Mordvinova N.E., Lebedev O.I. // RSC Adv. 2018. V. 8. P. 18896–18903. https://doi .org/10.1039/c8ra03260b
  83. Дорофеев С.Г., Кононов Н.Н., Бубенов С.С., Попеленский В.М., Винокуров А.А. // ФТП. 2022. Т. 56. № 2. С. 204–212. https://doi .org/10.21883/FTP.2022.02.51963.9727
  84. Popelensky V.M., Chernysheva G.S., Kononov N.N., Bubenov S.S., Vinokurov A.A., Dorofeev S.G. // Inorg. Chem. Commun. 2022. V. 141. 109602. https://doi .org/10.1016/j.inoche.2022.109602
  85. Vinokurov A., Popelensky V., Bubenov S., Kononov N., Cherednichenko K., Kuznetsova T., Dorofeev S. // Materials. 2022. V. 15. 8842. https://doi .org/10.3390/ma15248842
  86. Klimešová E., Kůsová K., Vacík J., Holý V., Pelant I. // J. Appl. Phys. 2012. V. 112. 064322. https://doi .org/10.1063/1.4754518
  87. Nastulyavichus A.A., Saraeva I.N., Rudenko A.A., Khmelnitskii R.A., Shakhmin A.L., Kirilenko D.A., Brunkov P.N., Melnik N.N., Smirnov N.A., Ionin A.A., Kudryashov S.I. // Part. Part. Syst. Charact. 2020. V. 37. 2000010. https://doi.org/10.1002/ppsc.202000010
  88. Baldwin R.K., Zou J., Pettigrew K.A., Yeagle G.J., Britt R.D., Kauzlarich S.M. // Chem. Commun. 2006. P. 658–660. https://doi.org/10.1039/B513330K
  89. Singh M.P., Atkins T.M., Muthuswamy E., Kamali S., Tu C., Louie A.Y., Kauzlarich S.M. // ACS Nano. 2012. V. 6. № 6. P. 5596–5604. https://doi .org/10.1021/nn301536n
  90. Zhang X., Brynda M., Britt R.D., Carroll E.C., Larsen D.S., Louie A.Y., Kauzlarich S.M. // J. Am. Chem. Soc. 2007. V. 129. P. 10668–10669. https://doi .org/10.1021/ja074144q
  91. McVey B.F.P., Butkus J., Halpert J.E., Hodgkiss J.M., Tilley R.D. // J. Phys. Chem. Lett. 2015. V. 6. № 9. P. 1573–1576. https://doi .org/10.1021/acs.jpclett.5b00589
  92. McVey B.F.P., König D., Cheng X., O’Mara P.B., Seal P., Tan X., Tahini H.A., Smith S.C., Gooding J.J., Tilley R.D. // Nanoscale. 2018. V. 10. № 33. P. 15600–15607. https://doi.org/10.1039/C8NR05071F
  93. Meier C., Gondorf A., Lüttjohann S., Lorke A. // J. Appl. Phys. 2007. V. 101. 103112. https://doi .org/10.1063/1.2720095
  94. Ramos L.E., Degoli E., Cantele G., Ossicini S., Ninno D., Furthmüller J., Bechstedt F. // Phys. Rev. B. 2008. V. 78. 235310. https://doi .org/10.1103/PhysRevB.78.235310
  95. Ni Z., Pi X., Yang D. // Phys. Rev. B. 2014. V. 89. 035312. https://doi.org/10.1103/PhysRevB.89.035312
  96. Pi X., Ni Z., Yang D., Delerue C. // J. Appl. Phys. 2014. V. 116. 194304. https://doi.org/10.1063/1.4901947
  97. Limpens R., Pach G.F., Mulder D.W., Neale N.R. // J. Phys. Chem. C. 2019. V. 123. P. 5782–5789. https://doi .org/10.1021/acs.jpcc.9b00223
  98. Kelly K.L., Coronado E., Zhao L.L., Schatz G.C. // J. Phys. Chem. B. 2003. V. 107. P. 668–677. https://doi .org/10.1021/jp026731y
  99. Faucheaux J.A., Stanton A.L.D., Jain P.K. // J. Phys. Chem. Lett. 2014. V. 5. P. 976–985. https://doi .org/10.1021/jz500037k
  100. Mendelsberg R.J., Garcia G., Li H., Manna L., Milliron D.J. // J. Phys. Chem. C. 2012. V. 116. P. 12226–12231. https://doi .org/10.1021/jp302732s
  101. Kriegel I., Rodríguez-Fernández J., Wisnet A., Zhang H., Waurisch C., Eychmüller A., Dubavik A., Govorov A.O., Feldmann J. // ACS Nano. 2013. V. 7. № 5. P. 4367–4377. https://doi .org/10.1021/nn400894d
  102. Kramer N.J., Schramke K.S., Kortshagen U.R. // Nano Lett. 2015. V. 15. P. 5597–5603. https://doi .org/10.1021/acs.nanolett.5b02287
  103. Somogyi B., Derian R., Štich I., Gali A. // J. Phys. Chem. C. 2017. V. 121. P. 27741–27750. https://doi .org/10.1021/acs.jpcc.7b09501
  104. Pereira R.N., Niesar S., You W.B., da Cunha A.F., Erhard N., Stegner A.R., Wiggers H., Willinger M.-G., Stutzmann M., Brandt M.S. // J. Phys. Chem. C. 2011. V. 115. P. 20120–20127. https://doi .org/10.1021/jp205984m
  105. Meseth M., Ziolkowski P., Schierning G., Theissmann R., Petermann N., Wiggers H., Benson N., Schmechel R. // Scr. Mater. 2012. V. 67. P. 265–268. https://doi .org/10.1016/j.scriptamat.2012.04.039
  106. Seino K., Bechstedt F., Kroll P. // Phys. Rev. B. 2012. V. 86. 075312. https://doi .org/10.1103/PhysRevB.86.075312
  107. Balberg I. // Physica E Low Dimens. Syst. Nanostruct. 2013. V. 51. P. 2–9. https://doi .org/10.1016/j.physe.2013.02.001
  108. Chen T., Reich K.V., Kramer N.J., Fu H., Kortshagen U.R., Shklovskii B.I. // Nat. Mater. 2016. V. 15. P. 299–303. https://doi .org/10.1038/nmat4486
  109. Gresback R., Kramer N.J., Ding Y., Chen T., Kortshagen U.R., Nozaki T. // ACS Nano. 2014. V. 8. № 6. P. 5650–5656. https://doi .org/10.1021/nn500182b
  110. Fernández-Serra M.-V., Adessi Ch., Blase X. // Nano Lett. 2006. V. 6. № 12. P. 2674–2678. https://doi .org/10.1021/nl0614258
  111. Huang J., Wang L., Sun H., Wang H., Gao M., Cheng W., Chen Z. // Mater. Sci. Semicond. Process. 2016. V. 47. P. 7–11. https://doi .org/10.1016/j.mssp.2016.01.005
  112. Sasaki M., Kano S., Sugimoto H., Imakita K., Fujii M. // J. Phys. Chem. C. 2016. V. 120. P. 195–200. https://doi .org/10.1021/acs.jpcc.5b05604
  113. Li D., Jiang Y., Liu J., Zhang P., Xu J., Li W., Chen K. // Nanotechnol. 2017. V. 28. 475704. https://doi .org/10.1088/1361-6528/aa852e
  114. Perez-Wurfl I., Hao X., Gentle A., Kim D.-H., Conibeer G., Green M.A. // Appl. Phys. Lett. 2009. V. 95. 153506. https://doi .org/10.1063/1.3240882
  115. Hong S.H., Kim Y.S., Lee W., Kim Y.H., Song J.Y., Jang J.S., Park J.H., Choi S.H., Kim K.J. // Nanotechnol. 2011. V. 22. № 42. 425203. https://doi .org/10.1088/0957-4484/22/42/425203
  116. Daoudi K., Columbus S., Falcão B.P., Pereira R.N., Peripolli S.B., Ramachandran K., Kacem H.H., Allagui A., Gaidi M. // Spectrochim. Acta A Mol.Biomol. Spectrosc. 2023. V. 290. 122262. https://doi .org/10.1016/j.saa.2022.122262

Қосымша файлдар

Қосымша файлдар
Әрекет
1. JATS XML
Жүктеу
2. Fig. 1. Comparison of the impurity contents (at. %) of boron and phosphorus determined by chemical titration (cct) and from the XPS spectra (cxps); the dotted line corresponds to the coincidence of the determined values. It is published with the permission of the copyright holder [18]. Copyright  2015 John Wiley and Sons.

Жүктеу (151KB)
Метадеректер
3. Fig. 2. Proxigrams of lf-Si doped with boron (a), phosphorus (b), together with boron and phosphorus (c) embedded in the oxide matrix. Zero reference corresponds to the silicon/oxide interface, positive values correspond to silicon nuclei, negative values correspond to the dielectric matrix. Adapted with the permission of the copyright holder [32]. Copyright  2016 American Chemical Society.

Жүктеу (474KB)
Метадеректер
4. Fig. 3. Lifetime of a neutral/charged biexi tone in low frequency Si as a function of size: intrinsic particles (black symbols) doped with phosphorus (red symbols), doped with boron (blue symbols). Adapted with the permission of the copyright holder [97]. Copyright  2019 American Chemical Society.

Жүктеу (204KB)
Метадеректер
5. Fig. 4. IR spectra of lf-Si with different levels of doping: (a) particles synthesized plasmochemically (the spectra indicate the nominal level of phosphorus doping, set by the ratio of reagents); (b) particles synthesized by laser-induced pyrolysis (the content of boron in the particles is indicated for the spectra). Adapted from the copyright holders [7] (Copyright 2013 American Chemical Society) and [13] (Copyright 2019 John Wiley and Sons).

Жүктеу (413KB)
Метадеректер
6. Fig. 5. The value of the energy gap for co- formed lf-Si of different diameters with different numbers of boron–phosphorus pairs, averaged over random configurations of impurity atoms. Adapted with the permission of the copyright holder [25]. Copyright  2018 American Physical Society.

Жүктеу (173KB)
Метадеректер
7. Fig. 6. Threshold voltage of a field-effect transistor with a current- conducting channel made of low-frequency Si of different sizes depending on the nominal doping level for phosphorus (red symbols) and boron (blue symbols), as well as from unalloyed particles (black symbols). The lines correspond to different levels of electrical activity of the impurity n. Adapted with the permission of the copyright holder [109]. Copyright  2014 American Chemical Society.

Жүктеу (275KB)
Метадеректер

© Russian Academy of Sciences, 2024