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Determination of the ratio of atoms and molecules in a tellurium beam using a mass spectrometer
Mikhailov V.I., Polyak L.E.
Study of SiO2 films implanted with 64Zn+ ions and oxidized at elevated temperatures
Privezentsev V.V., Sergeev A.P., Firsov A.A., Kulikauskas V.S., Zatekin V.V., Kirilenko E.P., Goryachev A.V., Kovalskiy V.A.
Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing
Yunin P.A., Drozdov M.N., Novikov A.V., Shmagin V.B., Demidov E.V., Mikhailov A.N., Tetelbaum D.I., Belov A.I.
The effect of atmospheric oxide thermodesorption on negative-ion atomic and cluster sputtering of silicon single crystal by cesium ions
Atabaev B.G., Djabbarganov R., Khalmatov A.S., Rakhmatov A.Z., Kamardin A.I.
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