Шығарылым |
Бөлім |
Атауы |
Файл |
Том 53, № 1 (2024) |
TECHNOLOGIES |
Interconnects Materials for Integrated Circuit Technology Below 5 Nm Node |
|
Том 52, № 5 (2023) |
INSTRUMENTATION |
Neuromorphic Systems: Devices, Architecture, and Algorithms |
|
Том 52, № 2 (2023) |
ЛИТОГРАФИЯ |
Cross Sections of Scattering Processes in Electron-Beam Lithography |
|
Том 52, № 2 (2023) |
INSTRUMENTATION |
Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures |
|
Том 54, № 1 (2025) |
MODELING |
Calculation of distributions of electron beam energy absorbed in PMMA and Si using various scattering models |
|
Том 54, № 2 (2025) |
NANOSTRUCTURES |
Electrical characteristics of ruthenium lines with a cross-sectional area less than 1000 nm2 |
|
Том 54, № 2 (2025) |
INSTRUMENTATION |
Ferroelectric transistors: operating principles, materials, applications |
|
Том 54, № 3 (2025) |
DIAGNOSTICS |
Structure of thin titanium nitride films deposited by magnetron sputtering |
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