Computer simulation of x-ray section topography of gas pores in a silicon carbide crystal
- Authors: Kohn V.G.1
-
Affiliations:
- National Research Centre "Kurchatov Institute"
- Issue: Vol 69, No 5 (2024)
- Pages: 764-770
- Section: ДИФРАКЦИЯ И РАССЕЯНИЕ ИОНИЗИРУЮЩИХ ИЗЛУЧЕНИЙ
- URL: https://ter-arkhiv.ru/0023-4761/article/view/673682
- DOI: https://doi.org/10.31857/S0023476124050025
- EDN: https://elibrary.ru/ZDZJMX
- ID: 673682
Cite item
Abstract
The results of computer simulation of images of gas pores in a silicon carbide crystal in sectional topograms, that is, during diffraction of a narrow beam of X-rays in the crystal, are presented for the first time. For this purpose, a special module of the universal computer program XRWP was used. This program is developing by the author to calculate the effects of coherent X-ray optics. The calculation method combines two methods, previously known, namely, Fourier transform methods (Kato method), and the method of solving the Takagi-Taupin equations. It is shown that gas pores can produce a wide variety of images, depending on the experimental conditions and the position of the gas pore inside the crystal.
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About the authors
V. G. Kohn
National Research Centre "Kurchatov Institute"
Author for correspondence.
Email: kohnvict@yandex.ru
Russian Federation, Moscow
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