GALLIUM NANOPARTICLES OBTAINED ON SILICON SUBSTRATES BY THERMAL EVAPORATION METHOD

G. N. Kozhemyakin; Кожемякин Г. Н.; Yu. S. Belov; Белов Ю. С.; M. K. Trufanova; Труфанова М. К.; V. V. Artemov; Артемов В. В.; I. S. Volchkov; Волчков И. С.

doi:10.31857/S0023476123020091

GALLIUM NANOPARTICLES OBTAINED ON SILICON SUBSTRATES BY THERMAL EVAPORATION METHOD

作者: Kozhemyakin G.N.¹, Belov Y.S.², Trufanova M.K.³, Artemov V.V.¹, Volchkov I.S.¹
隶属关系:
1. Shubnikov Institute of Crystallography, Federal Scientific and Research Center “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333 Russia
2. Bauman Moscow State Technical University, Kaluga Branch, Kaluga, 248000 Russia
3. Vladimir Dal Lugansk State University, Lugansk, 91034 Russia
期: 卷 68, 编号 2 (2023)
页面: 313-318
栏目: НАНОМАТЕРИАЛЫ, КЕРАМИКА
URL: https://ter-arkhiv.ru/0023-4761/article/view/673526
DOI: https://doi.org/10.31857/S0023476123020091
EDN: https://elibrary.ru/BQEGYD
ID: 673526

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Gallium nanostructures have been obtained on silicon substrates by thermal evaporation in an argon atmosphere. The sizes, density, and shape of Ga particles have been determined by computer processing of electron SEM-images. The condensation of Ga on Si substrates for 10, 15, and 20 s ensured the formation of particles of several types: spherical, triangular, square, and in the form of rods and polyhedrons. The increase in the Ga condensation time to 20 s led to the increase in the density of spherical nanoparticles by 41%.

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GALLIUM NANOPARTICLES, THERMAL EVAPORATION METHOD

参考

Teske D., Drumheller J.E. // J. Phys.: Condens. Matter. 1999. V. 11 (25). P. 4935. https://doi.org/10.1088/0953-8984/11/25/312
Charnaya E.V., Tien C., Lee M.K. et al. // Indium. N.-Y.: Nova Science Publ. Inc., 2013. P. 1.
Charnaya E.V., Tien C., Lin K.J. et al. // Phys. Rev. B. 1998. V. 58. P. 467. https://doi.org/10.1103/physrevb.58.467
Wu P.C., Khoury C.G., Kim T.-H. et al. // J. Am. Chem. Soc. 2009. V. 131 (34). P. 12033. https://doi.org/10.1021/ja903321z
Yi C., Kim T.-H., Jiao W. et al. // Small. 2012. V. 8 (17). P. 2721. https://doi.org/10.1002/smll.201200694
Wu P.C., Kim T.-H., Brown A.S. et al. // Appl. Phys. Lett. 2007. V. 90. P. 103119. https://doi.org/10.1063/1.2712508
Losurdo M., Yi C., Suvorova A. et al. // ACS Nano 2014. V. 8 (3). P. 3031. https://doi.org/10.1021/nn500472r
Knight M.W., Coenen T., Yang Y. // ACS Nano. 2015. V. 9 (2). P. 2049. https://doi.org/10.1021/nn5072254
Küpers H., Bastiman F., Luna E. et al. // J. Cryst. Growth. 2017. V. 459. P. 43. https://doi.org/10.1016/j.jcrysgro.2016.11.065
Matteini F., Tütüncüoglu G., Potts H. et al. // Cryst. Growth Des. 2015. V. 15. P. 3105. https://doi.org/10.1021/acs.cgd.5b00374
Tauchnitz T., Nurmamytov T., Hübner R. et al. // Cryst. Growth Des. 2017. V. 17 (10). P. 5276. https://doi.org/10.1021/acs.cgd.7b00797
Kozhemyakin G.N., Belov Yu.S., Trufanova M.K. et al. // Inorg. Mater.: Appl. Res. 2022. V. 13 (3). P. 788. https://doi.org/10.1134/S2075113322030200
Суздалев И.П. Нанотехнология: физико-химия нанокластеров, наноструктур и наноматериалов. М.: КомКнига, 2006. 592 с.
Физические величины: Справочник. Ред. Григорьева И.С., Мейлихова Е.З. М.: Энергоатомиздат, 1991. 1232 с.
Горелик С.С., Дашевский М.Я. Материаловедение полупроводников и диэлектриков. М.: Металлургия, 1988. 576 с.
Горшков В.С., Савельев В.Г., Федоров Н.Ф. Физическая химия силикатов и других тугоплавких соединений. М.: Высшая школа, 1988. 400 с.
Могилевский Б.М., Чудновский А.Ф. Теплопроводность полупроводников. М.: Наука, 1972. 536 с.
Чеканова В.Д., Фиалков А.С. // Успехи химии. 1971. Т. 40. № 5. С 777. https://doi.org/10.1070/RC1971v040n05ABEH001927