Gold alloying of ZnO crystals during their growth via the vapor-liquid-solid mechanism doping ZnO crystals with gold during their growth by the vapor-liquid-crystal method
- Авторлар: Podkur P.L.1, Volchkov I.S.1, Zadorozhnaya L.A.1, Kanevskii V.M.1
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Мекемелер:
- Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”
- Шығарылым: Том 69, № 2 (2024)
- Беттер: 252-258
- Бөлім: REAL STRUCTURE OF CRYSTALS
- URL: https://ter-arkhiv.ru/0023-4761/article/view/673205
- DOI: https://doi.org/10.31857/S0023476124020088
- EDN: https://elibrary.ru/YTCCGC
- ID: 673205
Дәйексөз келтіру
Аннотация
Arrays of ZnO microcrystals were grown on a silicon substrate (111) by applying the vapor deposition method with the vapor-liquid-crystal mechanism, where the liquid phase was gold. Differences in the obtained crystals at growth times of 5, 10, and 15 minutes are described. The lattice parameters of the microcrystals were calculated as the growth time increased: a = 3.316, c = 5.281; a = 3.291, c = 5.270; a = 3.286, c = 5.258 Å. The change in Au content in the microcrystals as they grew was determined, from 0.520 at. % at the substrate to 0.035 at. % on the crystal surfaces after 15 minutes of growth. Maps of the atomic element distribution are presented, and an the differences in lattice parameters of the obtained crystals compared to standard values are explained.
Толық мәтін

Авторлар туралы
P. Podkur
Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”
Email: volch2862@gmail.com
Ресей, Moscow
I. Volchkov
Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”
Хат алмасуға жауапты Автор.
Email: volch2862@gmail.com
Ресей, Moscow
L. Zadorozhnaya
Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”
Email: volch2862@gmail.com
Ресей, Moscow
V. Kanevskii
Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”
Email: volch2862@gmail.com
Ресей, Moscow
Әдебиет тізімі
- Jayaprakash N., Suresh R., Rajalakshmi S. et al. // Mater. Technol. 2019. V. 35. P. 112. https://doi.org/10.1080/10667857.2019.1659533
- Абдуев А.Х., Ахмедов А.К., Асваров А.Ш. // Письма в ЖТФ. 2014. Т. 40. С. 71.
- Наумов А.В., Плеханов С.И. // Энергия: экономика, техника, экология. 2013. Т. 7. С. 14.
- Rai P., Raj S., Ko K.-J. et al. // Sens. Actuators B Chem. 2013. V. 178. P. 107. https://doi.org/10.1016/j.snb.2012.12.031
- Zhao X., Lou F., Li M. et al. // Ceram. Int. 2014. V. 40. P. 5507. https://doi.org/10.1016/j.ceramint.2013.10.140
- Pagano R., Ingrosso C., Giancane G. et al. // Materials. 2020. V. 13. P. 2938. https://doi.org/10.3390/ma13132938
- Ohtomo A., Kawasaki M., Ohkubo I. et al. // Appl. Phys. Lett. 1999. V. 75. P. 980. https://doi.org/10.1063/1.124573
- Брискина Ч.М., Маркушев В.М., Задорожная Л.А. и др. // Квантовая электроника. 2022. Т. 52. С. 676.
- Грузинцев А.Н., Волков В.Т., Емельченко Г.А. и др. // Физика и техника полупроводников. 2002. Т. 37. С. 330.
- Li Z., Wang C. One-Dimensional Nanostructures Electrospinning: Technique and Unique Nanofibers. New York, Dordrecht, London: Springer Berlin Heidelberg, 2013. 141 p. https://doi.org/10.1007/978-3-642-36427-3
- Ляпина О.А., Баранов А.Н., Панин Г.Н. и др. // Неорган. матер. 2008. Т. 44. С. 958.
- Islam M.R., Rahman M., Farhad S.F.U. et al. // Surf. Interfaces. 2019. V. 16. P. 120. https://doi.org/10.1016/j.surfin.2019.05.007
- Тарасов А.П., Брискина Ч.М., Маркушев В.М. и др. // Письма в ЖЭТФ. 2019. Т. 110. С. 750. https://doi.org/10.1134/S0370274X19230073
- Тарасов А.П., Задорожная Л.А., Муслимов А.Э. и др. // Письма в ЖЭТФ. 2021. Т. 114. С. 596. https://doi.org/10.31857/S1234567821210035
- Абдуев А.Х., Ахмедов А.К., Асваров А.Ш. и др. // Кристаллография. 2020. Т. 65. С. 489. https://doi.org/10.31857/S0023476120030029
- Yamamoto T., Katayama-Yoshida H. // Jpn. J. Appl. Phys. 1999. V. 38. P. L166. https://doi.org/10.1143/JJAP.38.L166
- Joseph M., Tabata H., Kawai T. // Jpn. J. Appl. Phys. 1999. V. 38. P. L1205. https://doi.org/10.1143/JJAP.38.L1205
- Minegishi K., Koiwai Y., Kikuchi Y. et al. // Jpn. J. Appl. Phys. 1997. V. 36. P. L1453. https://doi.org/10.1143/JJAP.36.L1453
- Георгобиани А.Н., Грузинцев А.Н., Волков В.Т. и др. // Физика и техника полупроводников. 2002. Т. 36. С. 284.
- Sernelius B.E., Berggren K.-F., Jin Z.-C. et al. // Phys. Rev. B. 1988. V. 37. P. 10244. https://doi.org/10.1103/PhysRevB.37.10244
- Yoon M.H., Lee S.H., Park H.L. et al. // J. Mater. Sci. Lett. 2002. V. 21. P. 1703. https://doi.org/10.1023/A:1020841213266
- Nan T., Zeng H., Liang W. et al. // J. Cryst. Growth. 2012. V. 340. P. 83. https://doi.org/10.1016/j.jcrysgro.2011.12.047
- Liu M., Qu S.W., Yu W.W. et al // Appl. Phys. Lett. 2010. V. 97. P. 231906. https://doi.org/10.1063/1.3525171
- Khalid A., Ahmad P., Alharthi A.I. et al. // Materials. 2021. V. 14. P. 3223. https://doi.org/10.3390/ma14123223
- Асваров А.Ш., Ахмедов А.К., Муслимов А.Э. и др. // Письма в ЖТФ. 2022. Т. 48. С. 51. https://doi.org/10.21883/PJTF.2022.02.51914.19001
- Alsaad A.M., Ahmad A.A., Qattan I.A. et al. // Crystals. 2020. V. 10. P. 252. https://doi.org/10.3390/cryst10040252
- Волчков И.С., Ополченцев А.М., Задорожная Л.А. и др. // Письма в ЖТФ. 2019. Т. 45. С. 7. https://doi.org/10.21883/PJTF.2019.13.47948.17808
- González-Garnica M., Galdámez-Martínez A., Malagón F. et al. // Sens. Actuators B Chem. 2021. V. 337. P. 129765. https://doi.org/10.1016/j.snb.2021.129765
- Редькин А.Н., Маковей З.И., Грузинцев А.Н. и др. // Неорган. матер. 2007. Т. 43. С. 301.
- Zadorozhnaya L.A., Tarasov A.P., Volchkov I.S. et al. // Materials. 2022. V. 15. P. 8165. https://doi.org/10.3390/ma15228165
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